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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT NPN Switching Transistor
VOLTAGE 40 Volts
APPLICATION
* Telephony and proferssional communction equipment. * Other switching applications.
CH3904N1PT
CURRENT 0.2 Ampere
FEATURE
* Small surface mounting type. (FBPT-923) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch.
0.37(REF.) 0.50.05 1.00.05
FBPT-923
1.00.05 0.25(REF.)
CONSTRUCTION
* NPN Switching Transistor
0.050.04 0.680.05 0.420.05
CIRCUIT
1
3
0.30.05 0.260.05
2
Dimensions in millimeters
FBPT-923
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 60 40 6 200 200 100 100 +150 150 +150 V V V mA mA mA mW C C C
2006-07
UNIT
RATING CHARACTERISTIC CURVES ( CH3904N1PT )
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W
CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise gure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 A; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz 60 80 100 60 30 - - 650 - - - 300 - - - 300 - - 200 300 850 950 4 8 - 5 mV mV mV mV pF pF MHz dB - - MIN. MAX. 50 50 UNIT nA nA
Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp 300 s; 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - - - - - - 65 35 35 240 200 50 ns ns ns ns ns ns
RATING CHARACTERISTIC CURVES ( CH3904N1PT )
Total power dissipation Ptot = f (TS) Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10
360
mW
300 270
C
2 mA 10 2 5 V CE V BE
P tot
240 210 180 150 120
10 1 5
90 60 30 0 0 15 30 45 60 75 90 105 120
C 150 TS
10 0
0
0.2
0.4
0.6
0.8 1.0 V 1.2 V BE sat , V CE sat
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max Ptot DC
D= tp T tp
DC current gain hFE = f (I C) VCE = 10V, normalized
10 1 h FE
T
5
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
125 C 10 0 25 C
-55 C 5
10 0 -6 10
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0 tp
10 -1 10
-1
5 10 0
5 10 1
mA 10 2 2
C
RATING CHARACTERISTIC CURVES ( CH3904N1PT )
Short-circuit forward current transfer ratio h21e = f (IC) VCE = 10V, f = 1MHz
10 3 h 21e
h 22e
Open-circuit output admittance h22e = f (IC) VCE = 10V, f = 1MHz
10 2 s
5
5
10 2
10 1
5
5
10 1 -1 10
5
10
0
mA
10
1
10 0 -1 10
5
10
0
C
mA C
10
1
Delay time td = f (IC ) Rise time tr = f (IC)
Storage time t stg = f (IC)
10 3 ns t r ,t d tr td 10 2
10 3 ns ts
h FE = 10
25 C 125 C 10 2 h FE = 20 10
h FE = 20 10
VCC = 3 V
40 V 15 V 10 1 V BE = 2 V 0V
10 1
10 0 0 10
5 10 1
5 10 2
mA 10 3
10 0 0 10
5 10 1
5 10 2
C
mA 10 3 C

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